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PD - 93886D
SMPS MOSFET
IRF7460
HEXFET(R) Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
S S
VDSS
20V
RDS(on) max(m) )
10@VGS = 10V
ID
12A
1
8 7
A A D D D D
2
Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current
S G
3
6
4
5
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 20 12 10 100 2.5 1.6 0.02 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
3/25/01
IRF7460
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.089 7.2 10.5 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 10 VGS = 10V, ID = 12A m 14 VGS = 4.5V, ID = 9.6A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 19 6.9 6.0 17 11 6.9 12 4.3 2050 1060 150 Max. Units Conditions --- S VDS = 16V, ID = 9.6A --- ID = 9.6A --- nC VDS = 10V --- VGS = 4.5V, 26 VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 9.6A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
240 9.6
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.8 0.66 44 60 44 64 2.3 A 100 1.3 --- 66 90 66 96 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 9.6A, VGS = 0V TJ = 125C, IS = 9.6A, VGS = 0V TJ = 25C, IF = 9.6A, VR=10V di/dt = 100A/s TJ = 125C, IF = 9.6A, VR=10V di/dt = 100A/s
2
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IRF7460
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
10
1
2.7V
2.7V
20s PULSE WIDTH TJ = 150 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
10
1.0
TJ = 25 C
0.5
1 2.5
V DS = 15V 20s PULSE WIDTH 3.0 3.5 4.0 4.5
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7460
100000 10 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 9.6A VDS = 10V
VGS , Gate-to-Source Voltage (V)
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
Crss
100
2
10 1 10 100
0 0 10 20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
I D , Drain Current (A)
10
100
10us
100us
TJ = 25 C
1
10
1ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7460
12
VDS
10
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
8
-VDD
6
4.5V
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7460
R DS (on) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.04
0.020
0.03
0.015
0.02 VGS = 4.5V
0.010
ID = 12A
0.01 VGS = 10V 0.00 0 20 40 60 80 100 ID , Drain Current (A)
0.005 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
600
EAS , Single Pulse Avalanche Energy (mJ)
VG
VGS
3mA
TOP
500
Charge
IG ID
BOTTOM
ID 4.3A 7.7A 9.6A
Current Sampling Resistors
400
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15 V
V (B R )D S S tp VD S L DRIVE R
100
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
0 25 50 75 100 125 150
A
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7460
SO-8 Package Details
D -B-
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0 .1 0 (.0 0 4 ) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 4 5
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8
-C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS
L
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
SO-8 Part Marking
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7
IRF7460
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 ) 1 1.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00 (12.992) M AX .
14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25C, L = 5.2mH
RG = 25, IAS = 9.6A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/01
8
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